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AOB440 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB440 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOB440 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 60V ID = 75 A (V GS = 10V) RDS(ON) < 7.5m (VGS = 10V)
TO-263 D2-PAK
D Top View Drain Connected to Tab G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation
B C
Maximum 60 20 75 75 150 80 320 150 75 -55 to 175
Units V V A A mJ W C
TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG
TC=100C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case B
A A
t10s Steady-State Steady-State
Symbol RJA RJA RJC
Typ 8 35 0.7
Max 12 45 1
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB440
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=250uA, VGS=0V VDS=60V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C 2 150 6.3 10.5 90 0.7 1 55 3800 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 430 190 1.5 68 VGS=10V, VDS=30V, ID=30A 33 15 19 18 VGS=10V, VDS=30V, RL=1, RGEN=3 IF=30A, dI/dt=100A/s 35 44 23 53 98 64 2.3 88 4560 7.5 13 3 Min 60 10 50 100 4 Typ Max Units V A nA V A m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
VDS=5V, ID=30A Transconductance Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s
A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev1: May. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150 10V 125 100 ID (A) 75 4.5V 50 25 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 7.2 7 RDS(ON) (m) 6.8 6.6 6.4 6.2 6 0 20 40 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 ID=30A 20 RDS(ON) (m) 10 1 125C 10 25C 5 -40C 0 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 0.01 0.001 -40C 25C IS (A) 15 0.1 125C 100 Normalized On-Resistance 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V, 30A 20 VGS=4V 0 2 2.5 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics -40C 5V 60 ID(A) 6V 80 100 VDS=5V
40
125C 25C
VGS=10V
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=30V ID=30A 8 Capacitance (nF) VGS (Volts) 6 5 Ciss 4 3 2 1 0 0 40 60 Qg (nC) Figure 7: Gate-Charge Characteristics 20 80 0 15 30 45 60 VDS (Volts) Figure 8: Capacitance Characteristics 10000 RDS(ON) limited 100 ID (A) 10s 100s 10 TJ(Max)=175C TC=25C 1 1 10 100 VDS (V) Figure 9: Maximun Forward Biased Safe Operating Area (Note F) DC 1ms 10ms 100 0.00001 Power (W) TJ(Max)=175C TC=25C Crss Coss
6
4
2
0
1000
1000
0.001
0.1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=1.0C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1
T 1 10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200 60 50 Power Dissipation (W) 150 Current rating ID(A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 12: Current De-rating (Note B)
100
50
150 TA=25C ID(A), Peak Avalanche Current 125 100 75 50 25 0 0.000001
TA=150C
0.00001
0.0001
0.001
Time in avalanche, t A (s) Figure 10: Single Pulse Avalanche capability
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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